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IL410/ IL4108
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current
Features
High Input Sensitivity IFT = 2.0 mA, PF = 1.0 IFT = 5.0 mA, PF 1.0 300 mA On-State Current Zero Voltage Crossing Detector 600/800 V Blocking Voltage High Static dV/dt 10 kV/s Inverse Parallel SCRs Provide Commutating dV/dt >10 kV/s * Very Low Leakage < 10 A * * * * Isolation Test Voltage 5300 VRMS Small 6-Pin DIP Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * * * * * * * *
A1 C2 NC 3 ZCC* 6 MT2 5 NC 4 MT1
*Zero Crossing Circuit
i179030
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60065 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * FIMKO
Applications
Solid-state relays Industrial controls Office equipment Consumer appliances.
Description
The IL410/ IL4108 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package.
High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2.0 mA (DC). The IL410/ IL4108 uses two discrete SCRs resulting in a commutating dV/dt greater than 10 kV/s. The use of a proprietary dV/dt clamp results in a static dV/ dt of greater than 10 kV/s. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver. The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The Pchannel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the N-channel FET. Once the main voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver. The 600/800 V blocking voltage permits control of offline voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. The IL410/ IL4108 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.
Document Number 83627 Rev. 1.4, 26-Apr-04
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IL410/ IL4108
Vishay Semiconductors Order Information
Part IL410 IL4108 IL410-X006 IL410-X007 IL410-X009 IL4108-X006 IL4108-X007 IL4108-X009 Remarks 600 V VDRM, DIP-6 800 V VDRM, DIP-6 600 V VDRM, DIP-6 400 mil (option 6) 600 V VDRM, SMD-6 (option 7) 600 V VDRM, SMD-6 (option 9) 800 V VDRM, DIP-6 400 mil (option 6) 800 V VDRM, SMD-6 (option 7) 800 V VDRM, SMD-6 (option 9)
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation Derate from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.33 Unit V mA A mW mW/C
Output
Parameter Peak off-state voltage RMS on-state current Single cycle surge current Total power dissipation Derate from 25 C Pdiss Test condition Part IL410 IL4108 Symbol VDM VDM ITM Value 600 800 300 3.0 500 6.6 Unit V V mA A mW mW/C
Coupler
Parameter Test condition Symbol VISO Value 5300 Unit VRMS Isolation test voltage (between t = 1.0 min. emitter and detector, climate per DIN 500414, part 2, Nov. 74) Pollution degree (DIN VDE 0109) Creepage Clearance
2 7.0 7.0 mm mm
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Document Number 83627 Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors
Parameter Comparative tracking index per DIN IEC 112/VDE 0303 part 1, group IIIa per DIN VDE 6110 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Soldering temperature max. 10 sec. dip soldering 0.5 mm from case bottom RIO RIO Tstg Tamb Tsld Test condition Symbol Value 175 Unit
1012 10
11
C C C
- 55 to + 150 - 55 to + 100 260
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Input capacitance Thermal resistance, junction to ambient Test condition IF = 10 mA VR = 6.0 V VF = 0 V, f = 1.0 MHz Symbol VF IR CIN Rthja Min Typ. 1.16 0.1 25 750 Max 1.35 10 Unit V A pF C/W
Output
Parameter Off-state voltage Test condition ID(RMS) = 70 A Part IL410 IL4108 Repetitive peak off-state voltage IDRM = 100 A Off-state current VD = VDRM, Tamb = 100 C, IF = 0 mA VD = VDRM, IF = Rated IFT On-state voltage On-state current Surge (non-repetitive), on-state current Trigger current 1 Trigger current 2 Trigger current temp. gradient Inhibit voltage temp. gradient Off-state current in inhibit state Holding current Latching current Zero cross inhibit voltage Turn-on time Turn-off time VT = 2.2 V IF = Rated IFT VRM = VDM = VD(RMS) PF = 1.0, IT = 300 mA IF = IFT1, VDRM IT = 300 mA PF = 1.0, VT(RMS) = 1.7 V f = 50 Hz VD = 5.0 V VOP = 220 V, f = 50 Hz, TJ = 100 C, tpF > 10 ms IL410 IL4108 Symbol VD(RMS) VD(RMS) VDRM VDRM ID(RMS)1 ID(RMS)2 VTM ITM ITSM IFT1 IFT2 IFT1/Tj IFT2/Tj VDINH/Tj IDINH IH IL VIH ton toff 7.0 7.0 -20 50 65 5.0 15 35 50 25 200 500 1.7 Min 424 565 600 800 10 100 200 3.0 300 3.0 2.0 6.0 14 14 Typ. 460 Max Unit V V V V A A V mA A mA mA A/C A/C mV/C A A mA V s s
Document Number 83627 Rev. 1.4, 26-Apr-04
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IL410/ IL4108
Vishay Semiconductors
Parameter Critical rate of rise of off-state voltage Critical rate of rise of voltage at current commutation Test condition VD = 0.67 VDRM, TJ = 25 C VD = 0.67 VDRM, TJ = 80 C VD = 0.67 VDRM, dI/dtcrq 15 A/ms, TJ = 25 C VD = 0.67 VDRM, dI/dtcrq 15 A/ms, TJ = 80 C Critical rate of rise of on-state Thermal resistance, junction to ambient Part Symbol dV/dtcr dV/dtcr dV/dtcrq dV/dtcrq dI/dtcr Rthja Min 10000 5000 10000 5000 8.0 150 Typ. Max Unit V/s V/s V/s V/s A/s C/W
Coupler
Parameter Critical rate of rise of coupled input/output voltage Common mode coupling capacitance Capacitance (input-output) Isolation resistance f = 1.0 MHz, VIO = 0 V VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Test condition IT = 0 A, VRM = VDM = VD(RMS) Symbol dVIO/dt CCM CIO RIO RIO Min Typ. 10000 0.01 0.8 1012 1011 Max Unit V/s pF pF
Power Factor Considerations
A snubber isn't needed to eliminate false operation of the TRIAC driver because of the IL410/ IL4108's high static and commutating dV/dt with loads between 1.0 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include a RC snubber or a single capacitor directly across the device to damp the peak commutating dV/dt spike. Normally a commutating dV/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. But in the case of a zero voltage crossing optotriac, the commutating dV/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be held-off and not turnon. This hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in Figure 1. Note that the value of the capacitor increases as a function of the load current.
1 Cs(F) = 0.0032 (F)* 10^(0.0066IL (mA)
Cs - Shunt Capacitance - F
.1
.01
Ta = 25C, PF = 0.3 IF = 2.0 mA
.001 0
iIL410_01
50
100
150
200
250
300
350
400
IL - Load Current - mA(RMS)
Figure 1. Shunt Capacitance vs. Load Current
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Document Number 83627 Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors
The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causes the phototransistor to turn-on before the commutating spike has activated the zero cross network. Figure 2 shows the relationship of the LED drive for power factors of less than 1.0. The curve shows that if a device requires 1.5 mA for a resistive load, then 1.8 times (2.7 mA) that amount would be required to control an inductive load whose power factor is less than 0.3.
Typical Characteristics (Tamb = 25 C unless otherwise specified)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.0
iIL410_02
If(pk) - Peak LED Current - mA
IFth Normalized to IFth @ PF = 1.0 Ta = 25C
10000 Duty Factor 1000 .005 .01 .02 .05 .1 .2 .5
NIFth - Normalized LED Trigger Current
t DF =/t
100
0.2
0.4 0.6 0.8 PF - Power Factor
1.0
1.2
iIL410_04
10 10 -6
10 -5
10 -4 10 -3 10 -2 10 -1 t -LED Pulse Duration -s
10 0
101
Figure 2. Normalized LED Trigger Current vs. Power Factor
Figure 4. Peak LED Current vs. Duty Factor, Tau
1.4 1.3
VF - Forward Voltage - V
150
Ta = -55C
LED - LED Power - mW
1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 Ta = 85C Ta = 25C
100
50
0 -60
iIL410_05
-40
iIL410_03
-20 0 20 40 60 Ta - Ambient Temperature - C
80
100
Figure 3. Forward Voltage vs. Forward Current
Figure 5. Maximum LED Power Dissipation
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IL410/ IL4108
Vishay Semiconductors
tgd=f (IFIFT25C), VD=200 V, f=40 to 60 Hz, parameter: Tj
IT = f(VT), parameter: Tj
iIL410_06
iIL410_09
Figure 6. Typical Output Characteristics
Figure 9. Typical Trigger Delay Time
ITRMS=f(TA), RthJA=150 K/W Device switch soldered in pcb or base plate.
IDINH =f (IF/IFT25C), VD=600 V, parameter: Tj
iIL410_07
iIL410_10
Figure 7. Current Reduction
Figure 10. Typical Inhibit Current
40 to 60 Hz line operation, Ptot=f(ITRMS)
ITRMS=f(TPIN5), RthJ-PIN5=16.5 K/W Thermocouple measurement must be performed potentially separated to A1 and A2. Measuring junction as near as possible at the case.
iIL410_08
iIL410_11
Figure 8. Current Reduction
Figure 11. Power Dissipation 40 to 60 Hz Line Operation
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Document Number 83627 Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors
1
6
2
VDINHmin=f(IF/IFT25C), parameter: Tj Device zero voltage switch can be triggered only in hatched area below Tj curves.
5
0.1 F
220 V~
3
4
iIL410_12
iIL410_13
Figure 12. Typical Static Inhibit Voltage Limit
Figure 13. 1- Apply a Capacitor to the Supply Pins at the Load-Side
Technical Information Commutating Behavior
The use of a triac at the output creates difficulties in commutation due to both the built-in coupled thyristor systems. The triac can remain conducting by parasitic triggering after turning off the control current. However, if the IL410/4108 is equipped with two separate thyristor chips featuring high dv/dt strength, no RC circuit is needed in case of commutation.
33 1 6
2
5
22 nF
220 V~
3
4
Current commutation:
The values 100 A/ms with following peak reverse recovery current > 80 mA should not be exceeded.
iIL410_14
Avoiding high-frequency turn-off current oscillations:
This effect can occur when switching a circuit. Current oscillations which appear essentially with inductive loads of a higher winding capacity result in current commutation and can generate a relatively high peak reverse recovery current. The following alternating protective measures are recommended for the individual operating states:
Figure 14. 2 - Connect a Series Resistor to the Output and Bridge Both by a Capacitor
500 H 1 6
2
5
22 nF
220 V~
3
4
iIL410_15
Figure 15. 3 - Connect a Choke of Low Winding Cap. in Series, e.g., a Ringcore Choke, with Higher Load Currents Note: Measures 2 to 3 are especially required for the load separated from the IL410/ IL4108 during operation. The above mentioned effects do not occur with IL410/ IL4108 circuits which are
Document Number 83627 Rev. 1.4, 26-Apr-04
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IL410/ IL4108
Vishay Semiconductors
connected to the line by transformers and which are not mechanically interrupted. In such cases as well as in applications with a resistive load the corresponding protective circuits can be neglected.
Application Note
* Over voltage protection: A voltage-limiting varistor (e.g. SIO VS05K250) which directly connected to the IL410/ IL4108 can protect the component against overvoltage.
Control And Turn-On Behavior
The trigger current of the IL410/ IL4108 has a positive temperature gradient. The time which expires from applying the control current to the turn-on of the load current is defined as the trigger delay time (tgd). On the whole this is a function of the overdrive meaning the ratio of the applied control current versus the trigger current (IF/IFT). If the value of the control current corresponds to that of the individual trigger current of IL410/4108 turn-on delay times amounts to a few milliseconds only. The shortest times of 5.0 to 10 s can be achieved for an overdrive greater or equal than 10. The trigger delay time rises with an increase in temperature. For very short control current pulses (tplF < 500 s) a correspondingly higher control current must be used. Only the IL410/ IL4108 without zero voltage switch is suitable for this operating mode.
Zero Voltage Switch
The IL410/ IL4108 with zero voltage switch can only be triggered during the zero crossing the sine AC voltage. This prevents current spikes, e.g. when turningon cold lamps or capacitive loads.
Applications
Direct switching operation: The IL410/ IL4108 switch is mainly suited to control synchronous motors, valves, relays and solenoids in Gratz circuits. Due to the low latching current (500 A) and the lack of an RC circuit at the output, very low load currents can easily be switched. Indirect switching operation: The IL410/ IL4108 switch acts here as a driver and thus enables the driving of thyristors and triacs of higher performance by microprocessors. The driving current pulse should not exceed the maximum permissible surge current of the IL410/ IL4108. For this reason, the IL410/ IL4108 without zero voltage switch often requires current limiting by a series resistor. The favorably low latching current in this operating mode results in AC current switches which can handle load currents from some milliamperes up to high currents.
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Document Number 83627 Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors Package Dimensions in Inches (mm)
3 .248 (6.30) .256 (6.50)
2
1
pin one ID
ISO Method A
4
5
6
.335 (8.50) .343 (8.70) .039 (1.00) Min. .048 (1.22) .052 (1.32) .130 (3.30) .150 (3.81) 18 .033 (0.84) typ. .033 (0.84) typ. .100 (2.54) typ 3-9 .008 (.20) .012 (.30) .300-.347 (7.62-8.81) .130 (3.30) .150 (3.81) .300 (7.62) typ.
4 typ . .018 (0.46) .020 (0.51)
i178014
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
Document Number 83627 Rev. 1.4, 26-Apr-04
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IL410/ IL4108
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83627 Rev. 1.4, 26-Apr-04

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